? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c50a i dm t c = 25 c, pulse width limited by t jm 264 a i ar t c = 25 c66a e ar t c = 25 c75mj e as t c = 25 c 4.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 416 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c f c mounting force 22...130/5...30 n/lb weight 5 g hiperfet tm power mosfets q-class n-channel enhancement mode avalanche rated, high dv/dt, low q g low intrinsic r g , low t rr features z double metal process for low gate resistance z international standard packages z epoxy meet ul 94 v-0, flammability classification z avalanche energy and current rated z fast intrinsic rectifier advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 500 v v gs(th) v ds = v gs , i d = 8 ma 2.0 4.5 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c50 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = i t 74 m ? pulse test, t 300 s, duty cycle d 2 % g = gate d = drain s = source tab = drain ds99076(8/03) v dss = 500 v i d25 = 50 a r ds(on) = 74 m ? ? ? ? ? t rr 250 ns IXFR66N50Q2 isoplus247 tm (ixfr) advanced technical information g d s (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = i t , pulse test 30 44 s c iss 6800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1200 pf c rss 270 pf t d(on) 32 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 16 ns t d(off) r g = 1.0 ? (external), 60 ns t f 10 ns q g(on) 199 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 42 nc q gd 92 nc r thjc 0.3 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 66 a i sm repetitive; pulse width limited by t jm 264 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm 1 c i rm 1 0 a i f = 25a, -di/dt = 100 a/ s, v r = 100 v ixfr 66n50q2 note: test current i t = 33a isoplus247 outline
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